JPH0138364B2 - - Google Patents

Info

Publication number
JPH0138364B2
JPH0138364B2 JP59034209A JP3420984A JPH0138364B2 JP H0138364 B2 JPH0138364 B2 JP H0138364B2 JP 59034209 A JP59034209 A JP 59034209A JP 3420984 A JP3420984 A JP 3420984A JP H0138364 B2 JPH0138364 B2 JP H0138364B2
Authority
JP
Japan
Prior art keywords
heater
rotating
fixed shaft
lead
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59034209A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60178616A (ja
Inventor
Kazumasa Fujioka
Sumio Okuno
Muneo Mizumoto
Hideaki Kanbara
Shinjiro Ueda
Takaro Kuroda
Sumio Yamaguchi
Naoyuki Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59034209A priority Critical patent/JPS60178616A/ja
Priority to US06/706,184 priority patent/US4580522A/en
Publication of JPS60178616A publication Critical patent/JPS60178616A/ja
Publication of JPH0138364B2 publication Critical patent/JPH0138364B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/063—Heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59034209A 1984-02-27 1984-02-27 分子線エピタキシ装置の試料回転ホルダ Granted JPS60178616A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP59034209A JPS60178616A (ja) 1984-02-27 1984-02-27 分子線エピタキシ装置の試料回転ホルダ
US06/706,184 US4580522A (en) 1984-02-27 1985-02-27 Rotary substrate holder of molecular beam epitaxy apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59034209A JPS60178616A (ja) 1984-02-27 1984-02-27 分子線エピタキシ装置の試料回転ホルダ

Publications (2)

Publication Number Publication Date
JPS60178616A JPS60178616A (ja) 1985-09-12
JPH0138364B2 true JPH0138364B2 (en]) 1989-08-14

Family

ID=12407764

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59034209A Granted JPS60178616A (ja) 1984-02-27 1984-02-27 分子線エピタキシ装置の試料回転ホルダ

Country Status (2)

Country Link
US (1) US4580522A (en])
JP (1) JPS60178616A (en])

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61280610A (ja) * 1985-06-06 1986-12-11 Toshiba Corp 分子線エピタキシヤル成長装置
US4733937A (en) * 1986-10-17 1988-03-29 Welch Allyn, Inc. Illuminating system for endoscope or borescope
US4821674A (en) * 1987-03-31 1989-04-18 Deboer Wiebe B Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
US5198034A (en) * 1987-03-31 1993-03-30 Epsilon Technology, Inc. Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment
JPH0680605B2 (ja) * 1987-11-28 1994-10-12 株式会社村田製作所 電子部品チップ保持治具および電子部品チップのメタライズ面への金属コーティング方法
US5044943A (en) * 1990-08-16 1991-09-03 Applied Materials, Inc. Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus
US6506252B2 (en) 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
US8514278B2 (en) * 2006-12-29 2013-08-20 Ge Inspection Technologies Lp Inspection apparatus having illumination assembly
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US10177014B2 (en) * 2012-12-14 2019-01-08 Applied Materials, Inc. Thermal radiation barrier for substrate processing chamber components
EP2973642B1 (en) * 2013-03-14 2019-05-08 The Timken Company Rotating vacuum chamber coupling assembly
EP3100298B1 (en) 2014-01-27 2020-07-15 Veeco Instruments Inc. Wafer carrier having retention pockets with compound radii for chemical vapor deposition systems

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2398382A (en) * 1942-11-17 1946-04-16 Dean A Lyon Method for coating optical elements
US3424628A (en) * 1966-01-24 1969-01-28 Western Electric Co Methods and apparatus for treating semi-conductive materials with gases
US3751310A (en) * 1971-03-25 1973-08-07 Bell Telephone Labor Inc Germanium doped epitaxial films by the molecular beam method
US3824955A (en) * 1972-05-15 1974-07-23 A Marks Apparatus for coating television viewing tubes
US4181544A (en) * 1976-12-30 1980-01-01 Bell Telephone Laboratories, Incorporated Molecular beam method for processing a plurality of substrates
US4207836A (en) * 1977-07-01 1980-06-17 Hitachi, Ltd. Vacuum vapor-deposition apparatus
US4201152A (en) * 1978-02-27 1980-05-06 Varian Associates, Inc. Transfer and temperature monitoring apparatus
EP0100206A1 (en) * 1982-07-22 1984-02-08 Oerlikon-Buhrle U.S.A. Inc. Apparatus for treating an article in a vacuum chamber
US4514250A (en) * 1982-10-18 1985-04-30 At&T Bell Laboratories Method of substrate heating for deposition processes

Also Published As

Publication number Publication date
US4580522A (en) 1986-04-08
JPS60178616A (ja) 1985-09-12

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